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Silicon Carbide, Volume 1

- Growth, Defects, and Novel Applications

Om Silicon Carbide, Volume 1

This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth.

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  • Språk:
  • Engelsk
  • ISBN:
  • 9783527409532
  • Bindende:
  • Hardback
  • Sider:
  • 528
  • Utgitt:
  • 21. oktober 2009
  • Dimensjoner:
  • 152x231x15 mm.
  • Vekt:
  • 363 g.
  Gratis frakt
Leveringstid: 2-4 uker
Forventet levering: 2. april 2026

Beskrivelse av Silicon Carbide, Volume 1

This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth.

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