Utvidet returrett til 31. januar 2025

Semiconductor Interfaces: Formation and Properties

- Proceedings of the Workkshop, Les Houches, France February 24-March 6, 1987

Om Semiconductor Interfaces: Formation and Properties

(ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure.

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  • Språk:
  • Engelsk
  • ISBN:
  • 9783642729690
  • Bindende:
  • Paperback
  • Sider:
  • 389
  • Utgitt:
  • 6. desember 2011
  • Utgave:
  • 11987
  • Dimensjoner:
  • 173x245x21 mm.
  • Vekt:
  • 662 g.
  • BLACK NOVEMBER
  På lager
Leveringstid: 4-7 virkedager
Forventet levering: 5. desember 2024

Beskrivelse av Semiconductor Interfaces: Formation and Properties

(ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure.

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