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Stress and Strain Engineering at Nanoscale in Semiconductor Devices

Om Stress and Strain Engineering at Nanoscale in Semiconductor Devices

Based on 3D process and device simulations with mechanical stress simulations by finite element techniques, this book explains performance assessment of nanoscale devices with strained SiGe and other stressors. It explains the process-induced stress transfer and developments at 7nm technology and below node in the area of strain-engineered devices.

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  • Språk:
  • Engelsk
  • ISBN:
  • 9780367519292
  • Bindende:
  • Hardback
  • Sider:
  • 260
  • Utgitt:
  • 30. juni 2021
  • Dimensjoner:
  • 241x161x22 mm.
  • Vekt:
  • 560 g.
  • BLACK NOVEMBER
  Gratis frakt
Leveringstid: 2-4 uker
Forventet levering: 19. desember 2024

Beskrivelse av Stress and Strain Engineering at Nanoscale in Semiconductor Devices

Based on 3D process and device simulations with mechanical stress simulations by finite element techniques, this book explains performance assessment of nanoscale devices with strained SiGe and other stressors. It explains the process-induced stress transfer and developments at 7nm technology and below node in the area of strain-engineered devices.

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