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Fundamentals of Silicon Carbide Technology

- Growth, Characterization, Devices and Applications

Om Fundamentals of Silicon Carbide Technology

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.

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  • Språk:
  • Engelsk
  • ISBN:
  • 9781118313527
  • Bindende:
  • Hardback
  • Sider:
  • 400
  • Utgitt:
  • 21. november 2014
  • Dimensjoner:
  • 251x179x32 mm.
  • Vekt:
  • 1250 g.
  Gratis frakt
Leveringstid: 2-4 uker
Forventet levering: 27. desember 2024
Utvidet returrett til 31. januar 2025

Beskrivelse av Fundamentals of Silicon Carbide Technology

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.

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